Reflectometer

EUV Technology has pioneered the development of several of stand-alone inspection, metrology, calibration, and resist out-gassing testing tools for EUV lithographic applications that can be operated in a clean room environment on the floor of a fab. EUV Technology is the world’s leading manufacturer of EUV metrology and testing tools. One of the principal challenges in the ongoing EUVL research effort is the development of necessary at-wavelength metrology tools.

Based on a laser plasma source, EUV Technology has developed a recipe driven automated Reflectometers for the measurement of reflectivity and uniformity of multilayer coatings for EUV lithography mask blanks and absorbers, without removal from the clean environment. A multilayer reflectivity curve can be obtained in about 20 seconds The instrument achieves a peak reflectivity precision and a centroid wavelength precision which compare very favorably with the results obtained at synchrotron radiation facilities. This instrument has been commercially available since 2002 and has been delivered to several customers.

Technical details of EUV Technology Model No. EUV-LPR-1016.11

  • Nd:YAG laser and laser optical system
  • Removable laser target, laser target chamber and drive system
  • Monochromator chamber including
    • Focusing mirror and assembly
    • EUV Monochromator
  • Detector chamber assembly including
    • EUV detectors
    • Detector amplification system
  • Sample chamber including:
    • XY stage for dynamic sample manipulation
    • Static sample holder
  • Transfer core chamber
    • 3-axis Brooks vacuum robot
  • Load lock chamber
  • EFEM (Equipment front end module) including:
    • RSP200 pod opener
    • 3-axis Brooks atmospheric robot
    • HEPA filtration units
  • Vacuum system including
    • Turbomolecular pumps (4)
    • BOC Edwards EPX 180L roughing pump for the foreline
    • All metal VAT Vacuum valves:
      • Chamber isolation
      • Turbomolecular pump isolation
      • Chamber vent valves
  • Comprehensive control system including:
    • EMO/safety interlock system
    • Power distribution
    • Computer
    • Control software for full system automation
    • IO and communication controllers
    • Pneumatic manifolds
  • Separate electronic rack
  • Specifications of Automated EUV Reflectometer, EUV Technology Model No. EUV- LPR-1016.11:

  • Substrate dimensions: 152 mm x 152 mm x 6.25 mm (6” sq.)
  • Measurement area: 149 mm x 149 mm of the mask
  • Measurement spot size (dark-dark) : 1.8 X 1.8 mm or less
  • EUV median wavelength precision (3sigma): <= 0.003 nm
  • Average EUV median wavelength accuracy: <= 0.01 nm
  • EUV Peak reflectivity precision for Rp ~ 60% (abs) 3σ <= 0.5%
  • Average EUV Peak reflectivity accuracy for Rp ~ 60% (abs) <=1.0%
  • EUV Peak reflectivity precision for Rp ~ 2.0% (abs) 3σ <= 0.02%
  • Average EUV Peak reflectivity accuracy for Rp ~ 2.0% (abs) <= 0.1%
  • EUV Peak reflectivity precision for Rp ~ 0.3% (abs) 3σ <= 0.02%
  • Laser target can be replaced in less than 30 minutes
  • SMIF compatible vacuum mask blank handling robotic transfer system to transfer the mask from a standard container (RSP 200)
  • Class 1 clean-room compatible tool
  • Stage accuracy: 0.1mm
  • Supports messages required by SEMI E5-0706 for SECS-II implementation